Power Transistor Product List and Ranking from 12 Manufacturers, Suppliers and Companies

Introduction to EPC Space's GaN-on-Si【Space】

Achieving smaller and lighter circuits for important space missions!

EPCSpace is a joint venture between EPC, a leading company in GaN-on-Si power devices, and VPT, which provides DCDC converters for aerospace applications. It offers Rad Hard GaN-on-Si transistor solutions for satellites and high-reliability applications. It addresses critical environments in space for applications such as power/light detection and ranging (LiDAR), motor drive, and ion thrusters. 【Products】 ■ Rad Hard GaN Packaged Discretes ・https://epc.space/products/gan-discretes/ ■ Rad Hard GaN on Ceramic Adaptor ・https://epc.space/products/rad-hard-gan-die-on-ceramic-adaptor/ ■ Rad Hard GaN Drivers and Power Stages ・https://epc.space/products/drivers-and-power-stages/ *For more details, please refer to the related links or feel free to contact us.

Company：ジェピコ本社、大阪支店、名古屋支店、練馬支店
Price：Other

converter
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『LMG5200』

Fully integrated 80V GaN half-bridge power module 'LMG5200'

The LMG5200 device incorporates a GaN half-bridge power stage with an 80V, 10A driver and can be used in integrated power stage solutions utilizing enhancement-mode Gallium Nitride (GaN) FETs. This device consists of two 80V GaN FETs driven in a half-bridge configuration by a single high-frequency GaN FET driver. GaN FETs have nearly zero reverse recovery time and very low input capacitance (CISS), providing significant advantages in power conversion. All devices are mounted on a package platform that uses no bond wires, minimizing parasitic elements in the package. The LMG5200 device is supplied in a lead-free package measuring 6mm × 8mm × 2mm, making it easy to mount on PCBs. 【Features】 ■ Low power consumption ■ Ideal for isolated/non-isolated applications ■ Integrates one 80V 10A driver and two 80V 15mΩ GaN FETs ■ Gate driver capable of switching up to 10MHz *For more details, please contact us.

Company：日本テキサス・インスツルメンツ
Price：Other

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Other power sources
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High-frequency high-power transistor

Support for discontinued products! ASI manufactured high-power transistors.

◆HF Applications RF Power Transistors The HF series for wideband amplifiers outputs stable signals in the range of 2-30 MHz. ◆VHF Applications RF Power Transistors A lineup of power transistors for VHF applications. ◆UHF Applications RF Power Transistors A lineup of power transistors for UHF applications. ◆Aerospace Electronics RF Power Transistors A lineup of pulse transistors for aerospace electronic equipment. ◆Pulse Radar RF Power Transistors Transistors for pulse radar are available in a range from long to short pulse widths. ◆CW Microwave RF Power Transistors A lineup of power transistors for continuous wave applications in the GHz range. ◆Broadcast Station RF Power Transistors Achieves high linearity required for TV broadcasting transmitters. *For more details, please contact us through the request for materials.

Company：電販
Price：Other

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Transistor
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RF high-power transistors for aerospace use

RF high-power transistors for aerospace applications

Introducing our lineup of pulse transistors for avionics. Frequency: 1,025 - 1150MHz Advanced Semiconductor, Inc. (ASI) in the United States is a manufacturer of RF power transistors and high-frequency diodes. We offer a wide range of original products that are manufactured indefinitely, as well as components aimed at replacing products from other companies. Specifically, our RF power transistors include alternatives primarily based on products from Motorola, Philips, and STMicroelectronics (formerly SGS Thomson). If you encounter discontinued or hard-to-find components during new designs, please contact us. We may be able to design the desired circuit without the need for time-consuming design changes.

Company：電販
Price：Other

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transformer
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RF power transistor

High-power transistors characterized by high output, high gain, and high efficiency with low noise are usable up to 1 GHz.

POINT NINE Co., Ltd. aims to provide the highest quality products in the RF power transistor market. Certified with MIL-Q-9858, MIL-I-45208, and ISO 9001:2000. High power transistors characterized by high output, high gain, and high efficiency with low noise are usable up to 1GHz, making them suitable for communication satellites, ECM transistors, radar radios, and more. 【Product Lineup】 ■ 28V RF MOSFETs ■ 12V RF MOSFETs *For more details, please refer to the PDF materials or feel free to contact us.

Company：アスコット
Price：Other

Transistor
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[Research Report] Automotive Powertrain & Power Transistor

Survey Report on the Usage of Si IGBTs and SiC MOSFETs in Japan and Future Trend Predictions

This document is a research report on "On-Board Powertrain & Power Transistors." As efforts to combat global warming and achieve carbon neutrality progress, the electrification of vehicles is advancing, leading to practical applications and increased market competition among companies. High-voltage power devices (IGBT, RC-IGBT, SiC) are highlighted as key components that determine "low loss," "high reliability," and "cost" in relation to electrification. [Overview (Excerpt)] ■ Background ■ Report Structure (Table of Contents) *For more details, please refer to the PDF document or feel free to contact us.*

Company：エルテック
Price：Other

Transistor
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Power transistor 'CGD65B200S2'

Achieving compatibility with a wide range of switching frequencies for electronic devices!

The "CGD65B200S2" is an enhancement mode GaN-on-silicon power transistor. Since there is no external component, it can be directly connected if a sense resistor is needed. It is soldered to a wide copper area for improved flatness, thermal performance, and simplified thermal design. It comes in a DFN 5x6 SMD package that supports high frequencies. 【Features】 ■ Easy design ■ High reliability ■ 650V-8.5A mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.

Company：SUPREME COMPONENTS INTERNATIONAL
Price：Other

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Power transistor "CGD65A130S2"

ICeGaN gate technology that achieves compatibility! Equipped with gate drivers and controller chips.

The "CGD65A130S2" is an enhancement mode GaN-on-silicon power transistor. By incorporating a current detection function, a separate current detection resistor is unnecessary. Since there is no external component, if a sense resistor is needed, the device can be connected directly. It is soldered to a wide copper area on the ground, which improves flatness, enhances thermal performance, simplifies thermal design, and supports high frequencies in a DFN 8x8 SMD package. 【Features】 ■ Easy design ■ High reliability ■ 650V-12A mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.

Company：SUPREME COMPONENTS INTERNATIONAL
Price：Other

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Selling high-power GaN/LDMOS for 5G, WPT, and ISM bands.

5G base station uses 450W with integrated GaN HEMT, providing 55W power with 9dB backoff.

Farad has started handling products from Innogration Technologies (China), an ISO9000/ISO14000 certified manufacturer that designs and manufactures HF and high-frequency GaN/LDMOS power transistors. They have numerous achievements in semiconductor manufacturing equipment, industrial microwave amplifiers and generators, and applications such as 4G/5G communications in Japan and around the world. Aiming for high efficiency and high output, they offer a 390W GaN HEMT in the 2.45GHz band and a 100W GaN Doherty module in the 5GHz band, compatible with various packages. *For more details, please download the PDF document or feel free to contact us.

Company：ファラッド
Price：Other

Amplifier
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[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET)

You can understand the positional relationship between the gate layer, source layer, and body layer.

We investigated the shape and positional relationship of the poly-Si gate, n-type source layer, and p-type body layer of commercially available power transistors (DMOSFETs). By overlaying AFM images, we can also understand the positional relationship with the gate.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
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[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors

It is possible to perform magnified observation and EDX analysis at the gate destruction location identified by Slice & View.

We conducted Slice & View on a SiC transistor where the leak location was identified using a backside emission microscope, and performed magnified observation and SEM-EDX analysis at the confirmed destruction site. Bright contrast was observed in the reflected electron images, indicating the segregation of Si and Ni. It is believed that some segregation of elements such as Si and Ni occurred due to the destruction caused by the leak. Measurement methods: Slice & View, SEM-EDX, EMS Product field: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
Contract measurement
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Automotive GaN (Gallium Nitride) power transistor

This is a high Vth 650V GaN (gallium nitride) power transistor that also meets the AEC-Q101 standard.

We have prepared high Vth, high reliability, and high power GaN (gallium nitride) power transistors for automotive applications.

Company：トランスフォーム・ジャパン
Price：Less than 10,000 yen

Transistor
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Power transistor "CGD65A055S2"

Simple design, high reliability! If a sense resistor is needed, the device can be connected directly.

The "CGD65A055S2" is an enhancement mode GaN-on-silicon power transistor. The ICeGaN gate technology achieves compatibility with virtually all gate drivers and controller chips for a wide range of electronic device switching frequencies. By incorporating a current detection function, a separate current detection resistor is no longer necessary. 【Features】 ■ Easy design ■ High reliability ■ 650V-27A enhancement mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.

Company：SUPREME COMPONENTS INTERNATIONAL
Price：Other

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Power transistor "CGD65A130SH2"

Device loss in a no-load condition approaches zero! Achieving high current and high voltage resistance.

The "CGD65A130SH2" is an enhancement mode GaN-on-silicon power transistor that utilizes unique materials. With ICeGaN gate technology, virtually all gate drivers and controller chips are compatible. It enhances the ground plane, improves thermal performance, and simplifies thermal design. Additionally, the device can be directly soldered to a large copper area. 【Features】 ■ Easy design ■ High reliability ■ 650V-12Ae mode GaN power switch * An English version of the catalog is available for download. * For more details, please feel free to contact us.

Company：SUPREME COMPONENTS INTERNATIONAL
Price：Other

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RF power transistor for pulse radar

○ Transistors for pulse radar are available in a range from long to short pulse widths. 《For UHF Radar》 - Frequency: 400 - 500 MHz ASI Semiconductor, Inc. (ASI) is a manufacturer of RF power transistors and high-frequency diodes. In addition to a wide range of original products that are manufactured indefinitely, we also handle components aimed at replacing products from other companies. Specifically, we offer alternatives for RF power transistors primarily based on products from Motorola, Philips, and STMicroelectronics (formerly SGS Thomson). If you encounter discontinued or hard-to-find components during new designs, please contact us, and we may be able to design the desired circuit without the need for time-consuming design changes.

Company：電販
Price：Other

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CW Microwave RF Power Transistor

This is a lineup of power transistors for continuous wave applications in the ○GHz band. ASI Semiconductor, Inc. (ASI) is a manufacturer of RF power transistors and high-frequency diodes. In addition to a wide range of original products that are manufactured indefinitely, we also handle components aimed at replacing products from other companies. Specifically, for RF power transistors, we offer alternatives primarily based on products from Motorola, Philips, and STMicroelectronics (formerly SGS Thomson). If you encounter discontinued or hard-to-find components during new designs, we may be able to design the desired circuit without the need for time-consuming design changes, depending on your inquiries. *For more details, please refer to the catalog download.

Company：電販
Price：Other

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RF Power Transistor for Broadcasting Stations

We achieve the high linearity required for TV broadcasting transmitters. - Frequency for FM broadcasting: 108 MHz - Frequency for TV: 225 MHz - Frequency for TV: 860 MHz Advanced Semiconductor, Inc. (ASI) in the United States is a manufacturer of RF power transistors and high-frequency diodes. In addition to a wide range of original products that are manufactured indefinitely, we also handle components aimed at replacing products from other companies. Specifically, we offer alternatives primarily for RF power transistors from Motorola, Philips, and STMicroelectronics (formerly SGS Thomson). If you encounter discontinued or hard-to-find components during new designs, please contact us, and we may be able to design the desired circuit without the need for time-consuming design changes. *For more details, please refer to the catalog download.

Company：電販
Price：Other

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Bourns' IGBT is ideal for high voltage and high current applications.

Industry-leading high power efficiency * low switching loss

BOURNS has released an IGBT that combines a MOS structure gate input with a bipolar power transistor functioning as an output switch. By adopting TGFS technology, it achieves operational characteristics that reduce the collector-emitter saturation voltage V CE(sat) and minimize switching losses. <Features> - Discrete IGBT integrated with FRD - Advanced Trench Gate Field Stop (TGFS) technology - Low saturation voltage drop (V CE(sat)) - Low switching losses - TO252, TO247, TO247N packages - RoHS compliant - JEDEC standard compliant For sample requests, please feel free to contact our authorized distributor, Seiwa.

Company：セイワ東京本社、関西支社、名古屋営業所、中国無錫　　グループ会社　エレクトロン（長野県松本市）
Price：Other

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JSCJ Power Transistor

JSCJ Power Transistor: High Voltage and High Current Switching Device | Excellent Cost-Performance Semiconductor as a Compatible or Alternative Product

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. JSCJ's power transistors are switching devices designed to handle high voltage and high current, making them ideal semiconductor devices for applications with heavy loads, such as power circuits and motor control. Many of these products are compatible with power transistors from other manufacturers, allowing them to be used directly as substitutes, which greatly contributes to the replacement of existing circuits and the reduction of mass production costs. 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for the back-end processes (packaging and testing) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), the world's third-largest discrete semiconductor manufacturer as of 2017. *We can help you find alternatives, so please feel free to contact us.

Company：Axuas Co., Ltd.
Price：Other

switch
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Power transistor 'CGD65B130S2'

DFN 5x6 SMD package supporting high frequency! Improved flatness, enhanced thermal performance, and simplified thermal design.

The "CGD65B130S2" is an enhancement mode GaN-on-silicon power transistor. It features ICeGaN gate technology, which ensures compatibility with virtually all gate drivers and controller chips for a wide range of switching frequencies in electronic devices. Soldered to a large copper area for grounding, it improves flatness, thermal performance, and simplifies thermal design. 【Features】 ■ Easy design ■ High reliability ■ 650V-12A enhancement mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.

Company：SUPREME COMPONENTS INTERNATIONAL
Price：Other

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【Infineon：BSC670N25NSFDATMA1】

【Support for Electronic Component Procurement】 We support the urgent procurement of discontinued (EOL) and hard-to-obtain electronic components and semiconductors! We have established a thorough inspection system.

Are you looking for this part number? ■Manufacturer: Infineon ■Part Number: BSC670N25NSFDATMA1 Owen Corporation swiftly procures electronic components that have become difficult to obtain due to production discontinuation or delivery issues from a global network. We will definitely issue a quotation, so you can confirm the details before placing an order, giving you peace of mind. A veteran inspector who has monitored market distribution inventory for over 20 years conducts inspections, and only approved products are shipped. All deliveries include an inspection report. 【Our Inspection System】 ■X-ray Inspection Confirms internal structure through non-destructive testing and detects counterfeit and inferior products. ■Microscope Carefully checks for lead bending and any discrepancies in printed fonts. ■Digital Caliper Measures dimensions to the hundredth of a millimeter to detect cleverly crafted counterfeits. ■Curve Tracer Displays the voltage and current characteristic waveforms between terminals on the screen to detect defective products. ★Please visit our website from the link below. ★You can view our company brochure from the download button below. ▼For other part numbers you can inquire about, please refer to the lineup below.

Company：オーエン
Price：Other

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【Infineon：BTS117TCBUMA1】

【Support for Electronic Component Procurement】 We support the urgent procurement of discontinued (EOL) and hard-to-obtain electronic components and semiconductors! We have established a thorough inspection system.

Are you looking for this model number product? ■Manufacturer: Infineon ■Model number: BTS117TCBUMA1 Owen Corporation quickly procures electronic components that have become difficult to obtain due to production discontinuation or delivery issues from a global network. We will definitely issue a quotation, so you can confirm the details before placing an order, giving you peace of mind. A veteran inspector who has been monitoring market distribution inventory for 20 years conducts inspections, and only products that pass are shipped. All delivered items come with an inspection report. 【Our Inspection System】 ■X-ray Inspection Non-destructive testing to check internal structures and detect counterfeit and inferior products. ■Microscope Carefully checks for lead bending and any discrepancies in printed fonts. ■Digital Caliper Measures dimensions in 0.01mm increments to detect cleverly crafted counterfeits. ■Curve Tracer Displays the voltage and current characteristic waveforms between terminals on the screen to detect defective products. ★Please visit our website from the link below. ★You can view our company brochure from the download button below. ▼For other model numbers you can inquire about, please refer to the lineup below.

Company：オーエン
Price：Other

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Power Transistor Product List and Ranking from 12 Manufacturers, Suppliers and Companies | IPROS GMS

Power Transistor Manufacturer, Suppliers and Company Rankings

Power Transistor Product ranking